本文提出了一种新的多能量离子注入的计算方法等效面积法。应用这一方法可按器件的特殊要求,任意设计各种浓度分布。 本文应用这一方法,设计和计算了具有矩形杂质分布的Si-RAPD器件,具有低一高一低特殊分布的Si-RAPD和具有马头型结构的 GaAs M-ESPET器件,IMPATT器件,均得到了较为满意的结果。还对用这一方法设计新型器件的前景作了预测,最后把本文的计算结果与本纳德(R.H.Benhard)(1977)的实测值作了比较,结果是令人满意的。
In this paper, a new calculation method of multienergy implantation i.e., eqivalent area method has been proposed. According to the requirement for designing the specific device, a variety of concentration and implantation energy profile which can be arbitrarily supposed may be obtained by this method. Hence, it is possible to make the thin layer device which has a plane concentration profile.Using this method, the Si-EAPD device which has a rectangular on low-high-low concentration profile and the GaAs-MESFET or Si-IMPATT device which has a horsehead shape concentration profile have been designed and calculated. The calculated results are very satisfying. The prospect of the use of designing new-type device is predicted. The calculated results in this paper coicide with the experimental ones given by R.H.Benhard(1977).