正 (一)引言 近年来InP在光电和微波器件中的应用已引起广泛重视。对InP的欧姆接触和肖特基势垒已有报道,这些结果表明,Bp较Bn大,n-InP的比接触电阻较p-lnP的低。以InP为衬底的多层结构器件中,表面层有时是p-InP,因此研究p-InP与接触金属界面上的冶金行为和电学特性,对改善器件参数和提高器件的可靠性有实际意义。对p-InP与接触金属Pd,Mg/Ag,Au-Zn,Mg/Au,Pd/Ag的界面特性,已有用俄歇电子能谱(AES)和电子探针(EP)进行的研究结果
The interdiffusion of p-InP/TiPdAu at interface has been investigated by Auger electron spectroscopy (AES). The surface morphology of heat treatment samples are observed. The specific contact resistance as a function of heat treatment temperatures for the p-InP/ TiPdAu systems is also given.It is found that the interdiffusion of Au, In, P occurs during the heat treatment of p-InP/TiPdAu. The Pd layer as a diffusion barrier plays an important role. The interdiffusion, morphology and specific contact resistance for heat treatment samples of p-InP/TiPdau have interconnection and strong dependence on each other. The TiPdAu layers are used as p-electrodes for InGaAsP/InP double heterojunction light emitting diodes. The p-electrode has good stability.